Document Number: 93551

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Revision: 17-Apr-08

5

SD600N/R Series

Standard Recovery Diodes

(Stud Version), 600 A

Vishay Semiconductors

Fig. 8 - Forward Power Loss Characteristics

Fig. 9 - Maximum Non-Repetitive Surge Current

Fig. 10 - Maximum Non-Repetitive Surge Current

Fig. 11 - Maximum Non-Repetitive Surge Current

Fig. 12 - Maximum Non-Repetitive Surge Current

25

50

75

100

125

150

Maximum Allowable Ambient Temperature (°C)

1 K/W

R

=

0.0

2

K/ W

- D

elta

R

th

SA

0.0

4 K

/ W

0.0

6 K

/ W

0.1

K/ W

0.2 K

/ W

0.4 K/ W

0

100

200

300

400

500

600

700

800

900

1000

1100

0

100 200 300 400 500 600 700 800 900

DC

180°

120°

90°

60°

30°

RMSLimit

Conduction Period

Average Forward Current (A)

SD600N/ RSeries

(2500V to 3200V)

T = 150°C

J

2000

4000

6000

8000

10000

12000

110

100

Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)

At Any Rated Load Condition And With

Rated V

Applied Following Surge.

RRM

Initial T = 180°C

@60 Hz 0.0083 s

@50 Hz 0.0100 s

J

SD600N/ RSeries

(400V to 2000V)

2000

4000

6000

8000

10000

12000

14000

0.01

0.1

1

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

VersusPulse Train Duration.

Initial T = 180 °C

No Voltag e Reapp lied

Rated V

Reapplied

RRM

J

SD600N/ RSeries

(400V to 2000V)

2000

4000

6000

8000

10000

110

100

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

Initial T = 150°C

@60 Hz 0.0083 s

@50 Hz 0.0100 s

J

SD600N/ RSeries

(2500V to 3200V)

At Any Rated Load Condition And With

Rated V

Applied Following Surge.

RRM

2000

4000

6000

8000

10000

12000

0.01

0.1

1

Pulse Train Duration (s)

Initial T = 150 °C

No Voltage Reapplied

Rated V

Reapplied

J

RRM

VersusPulse Train Duration.

SD600N/ RSeries

(2500V to 3200V)

Maximum Non Repetitive Surge Current