4N35-X, 4N36-X, 4N37-X, 4N38

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Vishay Semiconductors

Rev. 1.8, 16-Jan-12

2

Document Number: 83717

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Surge current

t

≤ 10 μs

2.5

A

Power dissipation

70

mW

OUTPUT

Collector emitter breakdown voltage

70

V

Emitter base breakdown voltage

7V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Output power dissipation

150

mW

COUPLER

Isolation test voltage

t = 1 s

5000

Creepage distance

≥ 7mm

Clearance distance

≥ 7mm

Isolation thickness between emitter

and detector

≥ 0.4

mm

Comparative tracking index

DIN IEC 112/VDE 0303, part 1

≥ 175

Isolation resistance

Ω

Ω

Storage temperature

- 55 to + 150

°C

Operating temperature

- 55 to + 100

°C

2 mm from case,

≤ 10 s

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

1.2

1.5

V

0.9

1.3

1.7

V

0.1

10

μA

Capacitance

25

pF

OUTPUT

Collector emitter breakdown

4N35

30

V

4N36

30

V

4N37

30

V

4N38

80

V

Emitter collector breakdown

7V

Collector base breakdown

4N35

70

V

4N36

70

V

4N37

70

V

4N38

80

V