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2N6284G Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. 2N6284G
Descripción  Darlington ComplementarySilicon Power Transistors
Descarga  7 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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2N6284G Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
2
25
50
100
125
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
160
60
40
140
0
75
150
0
20
80
100
120
175
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
2N6286
2N6284, 2N6287
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
ICEO
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
2.0
3.0
Vdc
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
2.8
Vdc
Base−Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
4.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6284
2N6286, 2N6287
Cob
400
600
pF
Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%


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