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NM25C160 Datasheet(PDF) 7 Page - Fairchild Semiconductor

No. de Pieza. NM25C160
Descripción  16K-Bit Serial CMOS EEPROM (Serial Peripheral Interface (SPI) Synchronous Bus)
Descarga  10 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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NM25C160 Datasheet(HTML) 7 Page - Fairchild Semiconductor

 
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NM25C160 Rev. D.1
Functional Description (Continued)
READ SEQUENCE: Reading the memory via the serial SPI link
requires the following sequence. The CS line is pulled low to select
the device. The READ op-code is transmitted on the SI line
followed by the high order address byte (A10–A8), and the low
order address byte (A7–A0). The leading three bits in the high
order address byte will be ignored. After this is done, data on the
SI line becomes don’t care. The data (D7–D0) at the address
specified is then shifted out on the SO line. If only one byte is to
be read, the CS line can be pulled back to the high level. It is
possible to continue the READ sequence as the byte adress is
automatically incremented and data will continue to be shifted out.
When the highest address is reached (7FF), the address counter
rolls over to lowest address (000) allowing the entire memory to be
read in one continuous READ cycle. See Figure 6.
FIGURE 6. Read Sequence
TABLE 3. Block Write Protection Levels
Level
Status Register Bits
Array
Address
BP1
BP0
Protected
0
0
0
None
1
0
1
600-7FF
2
1
0
400-7FF
3
1
1
000-7FF
WRITE ENABLE (WREN): When VCC is applied to the chip, it
“powers up” in the write disable state. Therefore, all programming
modes must be preceded by a WRITE ENABLE (WREN) instruc-
tion. At the completion of a WRITE or WRSR cycle the device is
automatically returned to the write disable state. Note that a
WRITE DISABLE (WRDI) instruction will also return the device to
the write disable state. See Figure 8.
FIGURE 8. Write Enable


CS
SI
SO
WREN Op-Code
DS012402-10
WRITE DISABLE (WRDI): To protect against accidental data
disturbance the WRITE DISABLE (WRDI) instruction disables all
programming modes. See Figure 9.
FIGURE 9. Write Disable


CS
SI
SO
WRDI Op-Code
DS012402-11


CS
SI
SO
Read
Op-Code
Byte H
Addr. n
Byte L
Addr. n
Data
n
Data
n+1
Data
n+2
Data
n+3
DS012402-8


CS
SI
SO
RDSR
Op-Code
SR Data
MSB…LSB
DS012402-9
READ STATUS REGISTER (RDSR) : The Read Status Register
(RDSR) instruction provides access to the status register is used
to interrogate the READY/BUSY and WRITE ENABLE status of
the chip. Two non-volatile status register bits are used to select
one of four levels of BLOCK WRITE PROTECTION. The status
register format is shown in Table 2.
TABLE 2. Status Register Format
Bit
Bit
Bit
Bit
Bit
Bit
Bit
Bit
7
6
54
32
1
0
X
X
X
X
BP1
BP0
WEN
RDY
X = Don't Care
Status register Bit 0 = 0 (RDY) indicates that the device is READY;
Bit 0 = 1 indicates that a program cycle is in progress. Bit 1 = 0
(WEN) indicates that the device is not WRITE ENABLED; Bit 1 =
1 indicates that the device is WRITE ENABLED. Non-volatile
status register Bits 2 and 3 (BP0 and BP1) indicate the level of
BLOCK WRITE PROTECTION selected. The block write protec-
tion levels and corresponding status register control bits are
shown in Table 3. Note that if a RDSR instruction is executed
during a programming cycle only the RDY bit is valid. All
other bits are 1s. See Figure 7.
FIGURE 7. Read Status
WRITE SEQUENCE: To program the device, the WRITE PRO-
TECT (WP) pin must be held high and two separate instructions
must be executed. The chip must first be write enabled via the
WRITE ENABLE instruction and then a WRITE instruction must
be executed. Moreover, the address of the memory location(s) to
be programmed must be outside the protected address field
selected by the Block Write Protection Level. See Table 3.


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