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CAT5113ZI50T3 Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza CAT5113ZI50T3
Descripción Electrónicos  100?릘ap Digital Potentiometer (POT)
Download  13 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5113ZI50T3 Datasheet(HTML) 4 Page - ON Semiconductor

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CAT5113
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4
Table 1. OPERATION MODES
INC
CS
U/D
Operation
High to Low
Low
High
Wiper toward H
High to Low
Low
Low
Wiper toward L
High
Low to High
X
Store Wiper Position
Low
Low to High
X
No Store, Return to Standby
X
High
X
Standby
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Supply Voltage
VCC to GND
−0.5 to +7
V
Inputs
CS to GND
−0.5 to VCC +0.5
V
INC to GND
−0.5 to VCC +0.5
V
U/D to GND
−0.5 to VCC +0.5
V
H to GND
−0.5 to VCC +0.5
V
L to GND
−0.5 to VCC +0.5
V
W to GND
−0.5 to VCC +0.5
V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
0 to 70
C
Industrial (‘I’ suffix)
−40 to +85
C
Junction Temperature
+150
C
Storage Temperature
−65 to 150
C
Lead Soldering (10 s max)
+300
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Test Method
Min
Typ
Max
Units
VZAP (Note 1)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
V
ILTH (Notes 1, 2)
Latch-Up
JEDEC Standard 17
100
mA
TDR
Data Retention
MIL−STD−883, Test Method 1008
100
Years
NEND
Endurance
MIL−STD−883, Test Method 1003
1,000,000
Stores
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch-up protection is provided for stresses up to 100 mA on address and data pins from −1 V to VCC + 1 V


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