SI7682DP-T1-E3 datasheet(5/9 Pages) VISHAY

No. de pieza	SI7682DP-T1-E3

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

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Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

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Si7682DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

10

20

30

40

50

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power, Junction-to-Foot

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

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SI7682DP-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix

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