Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case

Fig.6 Typical Capacitance vs.

Collector to Emitter Voltage

Fig.7 Typical Gate Charge vs.

Gate to Emitter Voltage

110

0

100

200

300

400

500

600

Cres

Coes

Cies

Vce [V]

0

5

10

15

20

25

0

2

4

6

8

10

12

14

16

18

Vcc = 300V

Ic = 6.5A

Qg [nC]

0.00001

0.0001

0.001

0.01

0.1

1

10

0.01

0.1

1

10

0.5

0.2

0.1

0.05

0.02

0.01

s ingle puls e

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm x Zthjc + Tc

SGH13N60UFD

N-CHANNEL IGBT