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SGL160N60UF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SGL160N60UF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page ©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1 IGBT SGL160N60UF Ultra-Fast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A • High input impedance Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Description SGL160N60UF Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C 160 A Collector Current @ TC = 100°C80 A ICM (1) Pulsed Collector Current 300 A PD MaximumPowerDissipation @ TC = 25°C 250 W Maximum Power Dissipation @ TC = 100°C 100 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case -- 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. TO-264 G C E G C E G C E |
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