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IRF1404SPBF Datasheet(Hoja de datos) 4 Page - Kersemi Electronic Co., Ltd.

No. de Pieza. IRF1404SPBF
Descripción  HEXFET® Power MOSFET
Descarga  10 Pages
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Fabricante  KERSEMI [Kersemi Electronic Co., Ltd.]
Página de inicio  http://www.kersemi.com
Logo 

 
 4 page
background image
IRF1404S/LPbF
4
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
12000
V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V
= 20V
DS
V
= 32V
DS
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
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