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BC337-040G Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza BC337-040G
Descripción Electrónicos  Amplifier Transistors
Download  5 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BC337-040G Datasheet(HTML) 2 Page - ON Semiconductor

  BC337-040G Datasheet HTML 1Page - ON Semiconductor BC337-040G Datasheet HTML 2Page - ON Semiconductor BC337-040G Datasheet HTML 3Page - ON Semiconductor BC337-040G Datasheet HTML 4Page - ON Semiconductor BC337-040G Datasheet HTML 5Page - ON Semiconductor  
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BC337, BC337−25, BC337−40
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
45
Vdc
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
V(BR)CES
50
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
ICBO
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
ICES
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
BC337
BC337−25
BC337−40
(IC = 300 mA, VCE = 1.0 V)
hFE
100
160
250
60
630
400
630
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
1.2
Vdc
Collector−Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
15
pF
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
210
MHz
Figure 1. Thermal Response
t, TIME (SECONDS)
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
SINGLE PULSE


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