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CAT93C66YE-GT3 Datasheet(PDF) 7 Page - ON Semiconductor

No. de pieza CAT93C66YE-GT3
Descripción Electrónicos  4 kb Microwire Serial CMOS EEPROM
Download  16 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C66YE-GT3 Datasheet(HTML) 7 Page - ON Semiconductor

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CAT93C66, CAT93W66
http://onsemi.com
7
Write
After receiving a WRITE command (Figure 5), address
and the data, the CS (Chip Select) pin must be deselected for
a minimum of tCSMIN. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the SK
pin is not necessary after the device has entered the self
clocking mode. The ready/busy status of the CAT93C66,
CAT93W66 can be determined by selecting the device and
polling the DO pin. Since this device features Auto−Clear
before write, it is NOT necessary to erase a memory location
before it is written into.
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
tCSMIN (Figure 6). The falling edge of CS will start the self
clocking clear cycle of the selected memory location. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C66, CAT93W66 can be determined by selecting the
device and polling the DO pin. Once cleared, the content of
a cleared location returns to a logical “1” state.
Figure 4. EWEN/EWDS Instruction Timing
CS
DI
STANDBY
10
0
*
SK
* ENABLE = 11
DISABLE = 00
Figure 5. Write Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH−Z
HIGH−Z
10
1
BUSY
READY
STATUS
tHZ
tEW
tSV
VERIFY
AN−1
AN
A0
D0
DN
tCSMIN
Figure 6. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH−Z
HIGH−Z
1
BUSY
READY
STATUS
11
VERIFY
tHZ
AN AN−1
A0
tCS
tSV
tEW


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