©2002 Fairchild Semiconductor Corporation

SGW6N60UFD Rev. A1

IGBT

SGW6N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

Features

• High speed switching

• High input impedance

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Symbol

Description

SGW6N60UFD

Units

Collector-Emitter Voltage

600

V

Gate-Emitter Voltage

± 20

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

25

A

Diode Continuous Forward Current

A

Diode Maximum Forward Current

25

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case

--

4.0

°C/W

Thermal Resistance, Junction-to-Case

--

7.0

°C/W

--

40

°C/W

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

E

C

D2-PAK

G

C

E

G

C

E