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BAV70W Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BAV70W
Descripción Electrónicos  High-speed switching diodes
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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BAV70W Datasheet(HTML) 3 Page - NXP Semiconductors

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BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
3 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
Table 5.
Marking codes
Type number
Marking code[1]
BAV70
A4*
BAV70M
S4
BAV70S
A4*
BAV70T
A4
BAV70W
A4*
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
BAV70
Tamb ≤ 25 °C
-
215
mA
BAV70M
Ts =90 °C
-
150
mA
BAV70S
Ts =60 °C
-
250
mA
BAV70T
Ts =90 °C
-
150
mA
BAV70W
Tamb ≤ 25 °C
-
175
mA
IFRM
repetitive peak forward
current
BAV70
-
450
mA
BAV70M
-
500
mA
BAV70S
-
450
mA
BAV70T
-
500
mA
BAV70W
-
500
mA
IFSM
non-repetitive peak forward
current
square wave
[1]
tp =1 µs-
4
A
tp =1ms
-
1
A
tp = 1 s
-
0.5
A


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