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BAV70W Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAV70W Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 3 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Marking codes Type number Marking code[1] BAV70 A4* BAV70M S4 BAV70S A4* BAV70T A4 BAV70W A4* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current BAV70 Tamb ≤ 25 °C - 215 mA BAV70M Ts =90 °C - 150 mA BAV70S Ts =60 °C - 250 mA BAV70T Ts =90 °C - 150 mA BAV70W Tamb ≤ 25 °C - 175 mA IFRM repetitive peak forward current BAV70 - 450 mA BAV70M - 500 mA BAV70S - 450 mA BAV70T - 500 mA BAV70W - 500 mA IFSM non-repetitive peak forward current square wave [1] tp =1 µs- 4 A tp =1ms - 1 A tp = 1 s - 0.5 A |
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