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74HC7540DB Datasheet(PDF) 6 Page - NXP Semiconductors |
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74HC7540DB Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74HC_HCT7540 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 31 December 2012 6 of 16 NXP Semiconductors 74HC7540; 74HCT7540 Octal Schmitt trigger buffer/line driver; 3-state; inverting [1] tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. tt transition time see Figure 5 [2] VCC = 2.0 V - 14 60 75 90 ns VCC = 4.5 V - 5 12 15 18 ns VCC = 6.0 V - 4 10 13 15 ns CPD power dissipation capacitance per package; VI =GND to VCC [3] -29 - - - pF 74HCT7540 tpd propagation delay An to Yn; see Figure 5 [1] VCC = 4.5 V - 19 32 40 48 ns VCC = 5.0 V; CL =15pF - 16 - - - ns ten enable time OEnto Yn; see Figure 6 [1] VCC = 4.5 V - 19 32 40 48 ns tdis disable time OEnto Yn; see Figure 6 [1] VCC = 4.5 V - 20 32 40 48 ns tt transition time VCC = 4.5 V; see Figure 5 [2] - 5 12 15 18 ns CPD power dissipation capacitance per package; VI =GND to VCC 1.5 V [3] -31 - - - pF Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit see Figure 7. Symbol Parameter Conditions Tamb = 25 C Tamb = 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) |
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