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IRF6648 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6648 Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 02/28/06 IRF6648 DirectFET Power MOSFET DirectFET ISOMETRIC MN Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Typical values (unless otherwise specified) Description The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Optimized for Synchronous Rectification for 5V to 12V outputs l Ideal for 24V input Primary Side Forward Converters l Low Conduction Losses l Compatible with Existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. TC measured with thermocouple mounted to top (Drain) of part. Notes: SH SJ SP MZ MN VDSS VGS RDS(on) Qg tot Qgd 60V max ±20V max 5.5m Ω@ 10V 36nC 14nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f ID @ TC = 70°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current e A IS @ TC = 25°C Continuous Source Current (Body Diode) f IS @ TC = 70°C Continuous Source Current (Body Diode) f ISM Pulsed Source Current (Body Diode) e 69 Max. ±20 60 86 260 260 81 52 PD - 97043C |
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