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IRF6648 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF6648
Descripción Electrónicos  RoHs Compliant Containing No Lead and Bromide
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF6648 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
02/28/06
IRF6648
DirectFET
™ Power MOSFET ‚
DirectFET
™
ISOMETRIC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Typical values (unless otherwise specified)
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Optimized for Synchronous Rectification for 5V
to 12V outputs
l Ideal for 24V input Primary Side Forward Converters
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques

 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ TC measured with thermocouple mounted to top (Drain) of part.
Notes:
SH
SJ
SP
MZ
MN
VDSS
VGS
RDS(on)
Qg tot Qgd
60V max ±20V max 5.5m
Ω@ 10V 36nC 14nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
e
A
IS @ TC = 25°C
Continuous Source Current (Body Diode)
f
IS @ TC = 70°C
Continuous Source Current (Body Diode)
f
ISM
Pulsed Source Current (Body Diode)
e
69
Max.
±20
60
86
260
260
81
52
PD - 97043C


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