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ADA4891-2ARMZ-R7 Datasheet(PDF) 5 Page - Analog Devices |
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ADA4891-2ARMZ-R7 Datasheet(HTML) 5 Page - Analog Devices |
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5 / 20 page  ADA4891-1/ADA4891-2 Rev. A | Page 5 of 20 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 6 V Input Voltage (Common Mode) −VS − 0.5 V to +VS Differential Input Voltage ±VS Storage Temperature Range (R) −65°C to +125°C Operating Temperature Range (A Grade) −40°C to +125°C Lead Temperature (Soldering, 10 sec) 300°C The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. It can be calculated by PD = (VS × IS) + (VS − VOUT) × VOUT/RL (2) where: VS is the positive supply rail. IS is the quiescent current. VOUT is the output of the amplifier. RL is the output load of the amplifier. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. To ensure proper operating, it is necessary to observe the maximum power derating curve in Figure 5, where it is derived by setting TJ = 150°C in Equation 1. Figure 5 shows the maximum safe power dissipation in the package vs. the ambient temperature for the 5-lead SOT-23 (146°C/W), the 8-lead SOIC (115°C/W), and the 8-Lead MSOP (133°C/W) on a JEDEC standard 4-layer board. MAXIMUM POWER DISSIPATION 0 0.5 1.0 2.0 1.5 –55 –35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERAURE (°C) The maximum power that can be safely dissipated by the ADA4891-1/ADA4891-2 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit can cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. TJ = 150 °C The still-air thermal properties of the package (θJA), the ambient temperature (TA), and the total power dissipated in the package (PD) can be used to determine the junction temperature of the die. The junction temperature can be calculated as TJ = TA + (PD × θJA) (1) 8-LEAD MSOP 8-LEAD SOIC 5-LEAD SOT-23 Figure 5. Maximum Power Dissipation vs. Ambient Temperature ESD CAUTION |
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