SI7430DP datasheet(1/9 Pages) VAISH

No. de pieza	SI7430DP

Descripción Electrónicos	N-Channel 150 V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VAISH [Vaishali Semiconductor]

Página de inicio

Logo

1 / 9 page

Vishay Siliconix

Si7430DP

Document Number: 74282

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

1

N-Channel 150 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

Extremely Low Qgd for Reduced dV/dt, Qgd and

Shoot-Through

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Primary Side Switch

•

Single-Ended Power Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

150

0.045 at VGS = 10 V

26

23 nC

0.047 at VGS = 8 V

25

Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free)

Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

150

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

26

A

TC = 70 °C

21

TA = 25 °C

7.2b, c

TA = 70 °C

5.7b, c

Pulsed Drain Current

IDM

50

Continuous Source-Drain Diode Current

TC = 25 °C

IS

32

TA = 25 °C

4.5b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Single Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

64

W

TC = 70 °C

44

TA = 25 °C

5.2b, c

TA = 70 °C

3.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

19

24

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.5

1.8

Número de pieza similar - SI7430DP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI7430DP	114Kb / 7P	N-Channel 150-V (D-S) WFET Rev. A, 24-Jul-06
	SI7430DP	198Kb / 4P	N-Channel 150-V (D-S) MOSFET Rev. A, 18-Jun-07
	SI7430DP	198Kb / 4P	N-Channel 150-V (D-S) MOSFET Rev. A, 18-Jun-07
	SI7430DP	322Kb / 13P	N-Channel 150 V (D-S) MOSFET 01-Jan-2022

More results

Descripción similar - SI7430DP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SIR838DP	118Kb / 7P	N-Channel 150 V (D-S) MOSFET Rev. B, 30-Sep-13
Analog Power	AM20N15-250B	369Kb / 5P	N-Channel 150-V (D-S) MOSFET
Analog Power	AM90N15-16B	332Kb / 5P	N-Channel 150-V (D-S) MOSFET
Vishay Siliconix	SIR622DP	422Kb / 13P	N-Channel 150 V (D-S) MOSFET Rev. A, 23-May-16
Analog Power	AM90N15-20P	123Kb / 3P	N-Channel 150-V (D-S) MOSFET
Vishay Siliconix	SI7846DP-T1-GE3	148Kb / 8P	N-Channel 150-V (D-S) MOSFET Rev. F, 06-Apr-09
	SI7898DP	198Kb / 4P	N-Channel 150-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4488DY	45Kb / 5P	N-Channel 150-V (D-S) MOSFET Rev. B, 26-May-03
Analog Power	AM70N15-40P	123Kb / 3P	N-Channel 150-V (D-S) MOSFET
VBsemi Electronics Co.,...	VBM1158N	658Kb / 8P	N-Channel 150 V (D-S) MOSFET
VBsemi Electronics Co.,...	15T15GH-HF	1Mb / 9P	N-Channel 150 V (D-S) MOSFET

More results

SI7430DP Datasheet(PDF) 1 Page - Vaishali Semiconductor

SI7430DP Datasheet(HTML) 1 Page - Vaishali Semiconductor

Número de pieza similar - SI7430DP

Descripción similar - SI7430DP

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL