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SI7430DP Datasheet(PDF) 2 Page - Vaishali Semiconductor |
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SI7430DP Datasheet(HTML) 2 Page - Vaishali Semiconductor |
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2 / 9 page  www.vishay.com 2 Document Number: 74282 S11-0212-Rev. C, 14-Feb-11 Vishay Siliconix Si7430DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 172 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 10 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V 1 µA VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 5 A 0.036 0.045 Ω VGS = 8 V, ID = 5 A 0.0375 0.047 Forward Transconductancea gfs VDS = 15 V, ID = 5 A 23 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 1735 pF Output Capacitance Coss 160 Reverse Transfer Capacitance Crss 37 Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 43 nC VDS = 75 V, VGS = 8 V, ID = 5 A 23 35 Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 6.5 Gate Resistance Rg f = 1 MHz 0.85 1.3 Ω Turn-on Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 14 21 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 22 33 Fall Time tf 610 Turn-On Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 16 24 Rise Time tr 12 18 Turn-Off Delay Time td(off) 20 30 Fall Time tf 712 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 32 A Pulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 3 A 0.77 1.2 V Body Diode Reverse Recovery Time trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 63 95 ns Body Diode Reverse Recovery Charge Qrr 110 165 nC Reverse Recovery Fall Time ta 49 ns Reverse Recovery Rise Time tb 14 |
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