SI3456DDV datasheet(1/11 Pages) VISHAY

No. de pieza	SI3456DDV

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si3456DDV

New Product

Document Number: 69075

S09-1399-Rev. B, 20-Jul-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•

HDD

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

30

0.040 at VGS = 10 V

6.3

2.8 nC

0.050 at VGS = 4.5 V

5.7

Marking Code

AY

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si3456DDV-T1-E3 (Lead (Pb)-free)

Si3456DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

TSOP-6

Top View

6

4

1

2

3

5

3 mm

2.85 mm

D

S

G

(1, 2, 5, 6)

(3)

(4)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 120 °C/W.

d. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6.3

A

TC = 70 °C

5.1

TA = 25 °C

5.0a, b

TA = 70 °C

4.0a, b

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

2.2

TA = 25 °C

1.4a, b

Maximum Power Dissipation

TC = 25 °C

PD

2.7

W

TC = 70 °C

1.7

TA = 25 °C

1.7a, b

TA = 70 °C

1.1a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 5 s

RthJA

61

74

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

38

46

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