TPCA8A02-H

2010-01-19

1

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

Silicon N-Channel MOS Type (U-MOS V-H)

TPCA8A02-H

High Efficiency DC-DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

• Built-in a schottky barrier diode

• High-speed switching

Characteristic

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

34

Drain current

Pulsed (Note 1)

102

A

Drain power dissipation (Tc=25℃)

45

W

Drain power dissipation

(t

= 10 s)

(Note 2a)

2.8

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.6

W

Single-pulse avalanche energy

(Note 3)

150

mJ

Avalanche current

34

A

Repetitive avalanche energy

(Tc=25℃) (Note 4)

3.23

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

0.5±0.1

1.27

0.4±0.1

0.595

0.05 M A

1

4

5

8

0.15±0.05

0.8±0.1

1.1±0.2

4.25±0.2

1

4

5

8

5.0±0.2

0.95±0.05

S

0.05 S

A

0.166±0.05

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-5Q1A

Weight: 0.069 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN