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APA2177 Datasheet(PDF) 19 Page - Anpec Electronics Coropration

No. de Pieza. APA2177
Descripción  25mW Stereo Cap-Free Headphone Driver
Descarga  20 Pages
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Fabricante  ANPEC [Anpec Electronics Coropration]
Página de inicio  http://www.anpec.com.tw
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APA2177 Datasheet(HTML) 19 Page - Anpec Electronics Coropration

 
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Copyright
© ANPEC Electronics Corp.
Rev. A.1 - Jul., 2012
APA2177
www.anpec.com.tw
19
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100
°C
150
°C
60-120 seconds
150
°C
200
°C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3
°C/second max.
3
°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
183
°C
60-150 seconds
217
°C
60-150 seconds
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5
°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6
°C/second max.
6
°C/second max.
Time 25
°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm
3
<350
Volume mm
3
≥350
<2.5 mm
235
°C
220
°C
≥2.5 mm
220
°C
220
°C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm
3
<350
Volume mm
3
350-2000
Volume mm
3
>2000
<1.6 mm
260
°C
260
°C
260
°C
1.6 mm – 2.5 mm
260
°C
250
°C
245
°C
≥2.5 mm
250
°C
245
°C
245
°C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
5 Sec, 245
°C
HOLT
JESD-22, A108
1000 Hrs, Bias @ Tj=125
°C
PCT
JESD-22, A102
168 Hrs, 100
%RH, 2atm, 121°C
TCT
JESD-22, A104
500 Cycles, -65
°C~150°C
HBM
MIL-STD-883-3015.7
VHBM≧2KV
MM
JESD-22, A115
VMM≧200V
Latch-Up
JESD 78
10ms, 1tr≧100mA


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