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CSD19532Q5B Datasheet(PDF) 2 Page - Texas Instruments |
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CSD19532Q5B Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 13 page  CSD19532Q5B SLPS414 – DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.6 3.2 V VGS = 6 V, ID = 17 A 4.6 5.7 m Ω RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 17 A 4.0 4.9 m Ω gfs Transconductance VDS = 50 V, ID = 17 A 84 S Dynamic Characteristics Ciss Input Capacitance 3700 4810 pF Coss Output Capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 706 918 pF Crss Reverse Transfer Capacitance 14 18 pF RG Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (10 V) 48 62 nC Qgd Gate Charge Gate to Drain 8.7 nC VDS = 50 V, ID = 17 A Qgs Gate Charge Gate to Source 13 nC Qg(th) Gate Charge at Vth 9.5 nC Qoss Output Charge VDS = 50 V, VGS = 0 V 128 nC td(on) Turn On Delay Time 7 ns tr Rise Time 6 ns VDS = 50 V, VGS = 10 V, IDS = 17 A, RG = 0 Ω td(off) Turn Off Delay Time 22 ns tf Fall Time 6 ns Diode Characteristics VSD Diode Forward Voltage ISD = 17 A, VGS = 0 V 0.8 1.0 V Qrr Reverse Recovery Charge 249 nC VDS= 50 V, IF = 17 A, di/dt = 300 A/ μs trr Reverse Recovery Time 80 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 0.8 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 50 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19532Q5B |
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