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2N4919 Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza 2N4919
Descripción Electrónicos  Medium-Power Plastic PNP Silicon Transistors
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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2N4919 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 11
1
Publication Order Number:
2N4918/D
2N4918 − 2N4920* Series
Preferred Device
Medium−Power Plastic PNP
Silicon Transistors
These medium−power, high−performance plastic devices are
designed for driver circuits, switching, and amplifier applications.
Features
Pb−Free Package is Available**
Low Saturation Voltage − V
CE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
Excellent Power Dissipation Due to Thermopad Construction,
PD = 30 W @ TC = 25
_C
Excellent Safe Operating Area
Gain Specified to I
C = 1.0 A
Complement to NPN 2N4921, 2N4922, 2N4923
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
2N4918
2N4919
2N4920
VCEO
40
60
80
Vdc
Collector − Base Voltage
2N4918
2N4919
2N4920
VCBO
40
60
80
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
(Note 1)
IC
(Note 2)
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
30
0.24
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The
3.0 A max value is based upon actual current−handling capability of the
device (See Figure 5).
2. Indicates JEDEC Registered Data for 2N4918 Series.
THERMAL CHARACTERISTICS (Note 3)
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
qJC
4.16
°C/W
3. Recommend use of thermal compound for lowest thermal resistance.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3.0 A, 40−80 V, 30 W
GENERAL PURPOSE
POWER TRANSISTORS
*Preferred devices are recommended choices for future
use and best overall value.
TO−225
CASE 077
STYLE 1
1
2
3
http://onsemi.com
xx
= 18, 19, 20
Y
= Year
WW
= Work Week
MARKING DIAGRAM
YWW
2N
49xx
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION


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