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CAT24C44VI Datasheet(PDF) 7 Page - ON Semiconductor

No. de pieza CAT24C44VI
Descripción Electrónicos  256-Bit Serial Nonvolatile CMOS Static RAM
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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CAT24C44VI Datasheet(HTML) 7 Page - ON Semiconductor

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CAT24C44
7
Doc. No. MD-1083, Rev. T
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
RCL/
RECALL
RECALL
RECALL
RECALL
RECALL
Data is transferred from the EEPROM data memory to
RAM by either sending the RCL instruction or by pulling
the
RECALL input pin low. A recall operation must be
performed before the EEPROM store, or RAM write
operations can be executed. Either a hardware or soft-
ware recall operation will set the “previous recall” latch
internal to the CAT24C44.
POWER-ON RECALL
The CAT24C44 has a power-on recall function that
transfers the EEPROM data to the RAM. After Power-
up, all functions are inhibited for at least 200ns (Tpur)
from stable Vcc.
STO/
STORE
STORE
STORE
STORE
STORE
Data in the RAM memory area is stored in the EEPROM
memory either by sending the STO instruction or by
pulling the
STORE input pin low. As security against any
inadvertent store operations, the following conditions
must each be met before data can be transferred into
nonvolatile storage:
• The “previous recall” latch must be set (either a
software or hardware recall operation).
• The “write enable” latch must be set (WREN
instruction issued).
• STO instruction issued or
STORE input low.
During the store operation, all other CAT24C44 func-
tions are inhibited. Upon completion of the store opera-
tion, the “write enable” latch is reset. The device also
provides false store protection whenever VCC falls below
a 3.5V level. If VCC falls below this level, the store
operation is disabled and the “write enable” latch is
reset.
Figure 6. Hardware Store Cycle Timing
Figure 5. Recall Cycle Timing
RECALL
tRCZ
tORC
tRCC
tRCP
tARC
VALID DATA
UNDEFINED DATA
DO
HIGH-Z
STORE
tST
tSTP
DO
tSTZ
HIGH-Z


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