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CAT28F010 Datasheet(PDF) 9 Page - ON Semiconductor

No. de pieza CAT28F010
Descripción Electrónicos  1 Megabit CMOS Flash Memory
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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CAT28F010 Datasheet(HTML) 9 Page - ON Semiconductor

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CAT28F010
9
Doc. No. MD-1019, Rev. G
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
WRITE OPERATIONS
The following operations are initiated by observing the
sequence specified in the Write Command Table.
Read Mode
The device can be put into a standard READ mode by
initiating a write cycle with 00H on the data bus. The
subsequent read cycles will be performed similar to a
standard EPROM or E2PROM Read.
Signature Mode
An alternative method for reading device signature (see
Read Operations Signature Mode), is initiated by writing
the code 90H into the command register while keeping
VPP high. A read cycle from address 0000H with CE and
OE low (and WE high) will output the device signature.
CATALYST Code = 00110001 (31H)
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O0 to I/O7.
28F010 Code = 1011 0100 (B4H)
Figure 4. A.C. Timing for Erase Operation
28F010 F11
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
VCC
VPP
tWC
tWC
tRC
tCS
tCH
tCS
tCH
tCH
tEHQZ
tDF
tGHWL
tWPH
tWHWH2
tWHGL
tWP
tDS
HIGH-Z
DATA IN
= 20H
DATA IN
= A0H
VALID
DATA OUT
tDH
tWP
tDH
tDS
tDS
tWP
tDH
tOLZ
tOE
tOH
tLZ
tCE
tVPEL
VPPH
VPPL
0V
5.0V
VCC POWER-UP
& STANDBY
SETUP ERASE
COMMAND
ERASE
COMMAND
ERASING
ERASE VERIFY
COMMAND
ERASE
VERIFICATION
VCC POWER-DOWN/
STANDBY
tAS
tAH
DATA IN
= 20H
tWC


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