Analog Integrated Circuit Device Data

10

Freescale Semiconductor

34937A

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

CHARGE PUMP

Charge Pump

High Side Switch On Resistance

Low Side Switch On Resistance

Regulation Threshold Difference(17), (19)

–

–

250

6.0

5.0

500

10

9.4

900





mV

Charge Pump Output Voltage(18), (19)

8.5

12

9.5

–

–

–

V

GATE DRIVE

High Side Driver On Resistance (Sourcing)

–

–

–

–

6.0

8.5



High Side Driver On Resistance (Sinking)

–

–

3.0



High Side Current Injection Allowed Without Malfunction(19), (20)

–

–

0.5

A

Low Side Driver On Resistance (Sourcing)

–

–

–

–

6.0

8.5



Low Side Driver On-Resistance (Sinking)

–

–

3.0



Low Side Current Injection Allowed Without Malfunction(19), (20)

–

–

0.5



(21)

13

13

14.8

15.4

16.5

17

V

Reverse High Side Gate Holding Voltage(22)

Gate Output Holding Current = 2.0 µA

–

–

–

10

10

–

15

15

15

V

Notes

17.

When VLS is this amount below the normal VLS linear regulation threshold, the charge pump is enabled.

18.

19.

This parameter is a design characteristic, not production tested.

20.

Current injection only occurs during output switch transitions. The IC is immune to specified injected currents for a duration of

approximately 1.0 µs after an output switch transition. 1.0 µs is sufficient for all intended applications of this IC.

21.

If a slightly higher gate voltage is required, larger bootstrap capacitors are required. At high duty cycles, the bootstrap voltage may not

recover completely, leading to a higher output on-resistance. This effect can be minimized by using low ESR capacitors for the bootstrap

and the VLS capacitors.

22.

High Side Gate Holding voltage is the voltage between the Gate and Source of the high side FET when held in an on condition. The

trickle charge pump supplies bias and holding current for the High Side FET gate driver and output to maintain voltages after bootstrap

events. See Figure 11 for typical 100% high side gate voltage with a 5.0 µA load. This parameter is a design characteristic, not

production tested.

Table 4. Static Electrical Characteristics (continued)

Characteristics noted under conditions 8.0 V

Characteristic

Symbol

Min

Typ

Max

Unit