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2SC3265LT1 Datasheet(Hoja de datos) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

No. de Pieza. 2SC3265LT1
Descripción  NPN EPITAXIAL SILICON TRANSISTOR
Descarga  1 Pages
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Fabricante  WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]
Página de inicio  http://www.wej.cn
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WEJ
ELECTRONIC
CO.,LTD
to 2SA1298LT1
Dissipation:Pc=225mW
Complement
Collector Current:Ic=500mA
Collector
(Tc=25 C)
o
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
o
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Ta=25 C*
o
V
V
V
Ic
P
T
T
CBO
CEO
EBO
D
j
stg
V
V
V
mA
mW
C
O
O
C
Characteristic
NPN EPITAXIAL SILICON TRANSISTOR
2 S C 3 2 6 5 L T 1
*Total Device
Pulse Test: Pulse Width 300uS ,Duty cycle
2%
2SC3265LTI=A6
#
Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C
o
40
25
6
500
225
150
-55-150
Electrical Characteristics
(Ta=25 C)
o
Symbol
Test Conditions
Unit
MAX.
TYP.
MIN.
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Collector
Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Voltage
BV
BV
CBO
CEO
I
h
h
h
V
V
V
C
EBO
FE1
FE2
FE3
CE(sat)
BE(sat)
BE
ob
BV
I
f
EBO
CBO
T
I =100uA
I =1mA
I =100uA
C
C
E
I =0
I =0
I =0
V
=35V, I =0
V
=6V, I =0
V
=1V, I =5mA
V
=1V, I =50mA
V
=1V, I =500mA
I =500mA, I =50mA
I =500mA, I =50mA
I
=1V, I =10mA
V
=10V, I =0,f=1MHz
V
=10V, I =50mA
E
B
C
CB
E
EB
C
CE
C
CE
C
CE
C
C
B
C
B
CE
C
CB
E
CE
C
V
V
V
nA
nA
40
25
6
45
85
30
100
100
300
0.5
1.2
1
100
PF
MHz
V
V
V
160
0.28
0.98
0.66
9
190
Characteristic
3
1
2
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
1.
1.3
2.4
Unit:mm
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS




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