TPS63051

SLVSAM8 – JULY 2013

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION

VOUT

PART NUMBER

PACKAGE

ORDERING

PACKAGE MARKING

–40°C to

3.3 V

TPS63051

WCSP

TPS63051YFF

63051

85°C

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

VALUE

MIN

MAX

UNIT

VIN, L1, L2, VOUT, EN, FB, PG, ILIM0, ILIM1

–0.3

7

V

SS

-0.3

3

V

Human Body Model

1.5

kV

Charged Device Model

500

V

–40

150

°C

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability

(2)

ESD testing is performed according to the respective JESD22 JEDEC standard.

THERMAL INFORMATION

TPS63051

UNITS

12 PINS

Junction-to-ambient thermal resistance

89.9

Junction-to-case(top) thermal resistance

0.7

Junction-to-board thermal resistance

43.9

°C/W

Junction-to-top characterization parameter

2.9

Junction-to-board characterization parameter

43.7

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

RECOMMENDED OPERATING CONDITIONS

MIN

TYP

MAX UNIT

VIN

Input Voltage Range

2.5

5.5

V

L

Inductor Value

1

1.5

2.2

µH

Output Capacitor value

10

120

µF

Operating ambient temperature

–40

85

°C

Operating junction temperature

–40

125

°C

2

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