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TPS65311QRVJRQ1 Datasheet(PDF) 10 Page - Texas Instruments |
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TPS65311QRVJRQ1 Datasheet(HTML) 10 Page - Texas Instruments |
10 / 49 page TPS65311-Q1 SLVSCA6A – OCTOBER 2013 – REVISED OCTOBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) VIN = VINPROT 4.8 V to 40 V, VSUPx = 3 V to 5.5 V, EXTSUP = 0 V, TJ(max) = 125°C, unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOLTAGE MONITORS BUCK1/2/3, VIO, LDO, BOOSTER VMONTH_L Voltage monitor reference REF = 0.8 V – falling edge 90 92 94 % VMONTH_H Voltage monitor reference REF = 0.8 V – rising edge 106 108 110 % VMON_HY Voltage monitor hysteresis 2 % Undervoltage monitoring at VIO – VVIOMON_TH 3 3.13 V falling edge VVIOMON_HY UV_VIO hysteresis 0.05 V Blanking time between UV/OV tVMON_BLK UV/OV: BUCK1/2/3 UV: VIO 10 20 µs condition to RESN low Blanking time between undervoltage BUCK1/2/3 → ERROR mode LDO or BOOST → SPI tVMONTHL_BLK condition to ERROR mode transition 1 ms bit set or turn off or corresponding SPI bit Blanking time between undervoltage tVMONTHL_BLK1 VIO only 10 20 µs condition to ERROR mode transition Blanking time between overvoltage BUCK1/2/3 → ERROR mode VIO has no OV tVMONTHH_BLK1 10 20 µs condition to ERROR mode transition protection Blanking time LDO and BOOST LDO or BOOST (ACTIVE mode) → SPI bit set or turn overvoltage condition to tVMONTHH_BLK2 off LDO (VTCHECK or RAMP mode) → ERROR 20 40 µs corresponding SPI bit or ERROR mode mode GND LOSS VGLTH-low GND loss threshold low GND to PGNDx –0.31 –0.25 –0.19 V VGLTH-high GND loss threshold high GND to PGNDx 0.19 0.25 0.31 V Blanking time between GND loss tGL-BLK condition and transition to ERROR 10 20 µs state POWER-UP SEQUENCING tSTART1 Soft start time of BOOST From start till exceeding VMONTH_L + VMON_HY Level 0.7 2.7 ms Soft start time of BUCK1/2/3 and tSTART2 From start till exceeding VMONTH_L + VMON_HY Level 0.5 2 ms LDO tSTART Startup DVDD regulator From start till exceeding VMONTH_L + VMON_HY Level 3 ms Sequencing time from start of tSEQ2 Internal SSDONE_BUCK1 signal 3 ms BUCK1 to BUCK2 and BOOST Startup time from entering tWAKE-RES GPFET = IRFR6215 14 ms TESTSTART to RESN high Sequencing time from start of tSEQ1 Internal SSDONE_BOOST signal 1 4 ms BOOST to BUCK3 INTERNAL VOLTAGE REGULATORS — TJ(max) = 125°C IVREG = 0 mA to 50 mA, VINPROT = 6.3 V to 40 V and VREG Internal regulated supply 5.5 5.8 6.1 V EXTSUP = 6.3 V to 12 V IVREG = 0 mA to 50 mA and EXTSUP ramping positive, VEXTSUP-TH Switch over voltage 4.4 4.6 4.8 V ACTIVE mode VEXTSUP-HY Switch over hysteresis 100 200 300 mV IVREG = 50 mA, VREGDROP Drop out voltage on VREG EXTSUP = 5 V / VINPROT = 5 V and 200 mV EXTSUP = 0 V / VINPROT = 4 V IREG_CL EXTSUP = 0 V, VREG = 0 V –250 –50 mA Current limit on VREG IREG_EXTSUP_CL EXTSUP ≥ 4.8 V, VREG = 0 V –250 –50 mA CVREG Capacitive load 1.2 2.2 3.3 µF VREG rising 3.8 4 4.2 V VREG-OK VREG undervoltage threshold Hysteresis 350 420 490 mV VDVDD Internal regulated low voltage supply 3.15 3.3 3.45 V VDVDD UV DVDD undervoltage threshold DVDD falling 2.1 V VDVDD OV DVDD overvoltage threshold DVDD rising 3.8 V Blanking time from DVDD tDVDD OV overvoltage condition to shutdown 10 20 µs mode transition 10 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: TPS65311-Q1 |
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