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L6201013TR Datasheet(PDF) 10 Page - STMicroelectronics

No. de pieza L6201013TR
Descripción Electrónicos  DMOS FULL BRIDGE DRIVER
Download  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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L6201013TR Datasheet(HTML) 10 Page - STMicroelectronics

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CIRCUIT DESCRIPTION
The L6201/1PS/2/3 is a monolithic full bridge
switching motor driver realized in the new Mul-
tipower-BCD technology which allows the integra-
tion of multiple, isolated DMOS power transistors
plus mixed CMOS/bipolar control circuits. In this
way it has been possible to make all the control
inputs TTL, CMOS and
µC compatible and elimi-
nate the necessity of external MOS drive compo-
nents. The Logic Drive is shown in table 1.
Table 1
Inputs
Output Mosfets (*)
VEN = H
IN1
IN2
L
L
H
H
L
H
L
H
Sink 1, Sink 2
Sink 1, Source 2
Source 1, Sink 2
Source 1, Source 2
VEN = L
X
X
All transistors turned oFF
L = Low
H = High
X = DON’t care
(*) Numbers referred to INPUT1 or INPUT2 controlled output stages
Although the device guarantees the absence of
cross-conduction, the presence of the intrinsic di-
odes in the POWER DMOS structure causes the
generation of current spikes on the sensing termi-
nals. This is due to charge-discharge phenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 14). When the output
switches from high to low, a current spike is gen-
erated associated with the capacitor C1. On the
low-to-high transition a spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(fig. 15).
TRANSISTOR OPERATION
ON State
When one of the POWER DMOS transistor is ON
it can be considered as a resistor RDS (ON)
throughout the recommended operating range. In
this condition the dissipated power is given by :
PON = RDS (ON)
⋅ IDS2 (RMS)
The low RDS (ON) of the Multipower-BCD process
can provide high currents with low power dissipa-
tion.
OFF State
When one of the POWER DMOS transistor is
OFF the VDS voltage is equal to the supply volt-
age and only the leakage current IDSS flows. The
power dissipation during this period is given by :
POFF = VS
⋅ IDSS
The power dissipation is very low and is negligible
in comparison to that dissipated in the ON
STATE.
Transitions
As already seen above the transistors have an in-
trinsic diode between their source and drain that
can operate as a fast freewheeling diode in
switched mode applications. During recirculation
with the ENABLE input high, the voltage drop
across the transistor is RDS (ON)
⋅ ID and when it
reaches the diode forward voltage it is clamped.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir-
culation current. The power dissipated in the tran-
sitional times in the cycle depends upon the volt-
age-current waveforms and in the driving mode.
(see Fig. 7ab and Fig. 8abc).
Ptrans. = IDS (t)
⋅ VDS (t)
Figure 14: Intrinsic Structures in the POWER
DMOS Transistors
Figure 15: Current Typical Spikes on the Sens-
ing Pin
L6201 - L6202 - L6203
10/20


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