STP13NM60ND datasheet(1/21 Pages) STMICROELECTRONICS

No. de pieza	STP13NM60ND

Descripción Electrónicos	N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

May 2013

DocID024645 Rev 1

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STD13NM60ND, STF13NM60ND,

STP13NM60ND

N-channel 600 V, 0.32

Ω typ., 11 A, FDmesh™ II Power MOSFET

(with fast diode) in DPAK, TO-220FP and TO-220 packages

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• The worldwide best R

DS(on)

* area among fast

recovery diode devices

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Switching applications

Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

TO-220FP

1

2

3

TAB

1

2

3

DPAK

TO-220

1

3

TAB

Order codes

VDS @ TJmax RDS(on) max

ID

STD13NM60ND

650 V

0.38

Ω

11 A

STF13NM60ND

STP13NM60ND

Table 1. Device summary

Order codes

Marking

Package

Packaging

STD13NM60ND

13NM60ND

DPAK

Tape and reel

STF13NM60ND

TO-220FP

Tube

STP13NM60ND

TO-220

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STP13NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

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