2SA1241-O datasheet(4/5 Pages) TOSHIBA

No. de pieza	2SA1241-O

Descripción Electrónicos	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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4 / 5 page

2SA1241

2010-08-24

4

Base-emitter voltage VBE (V)

IC – VBE

Ambient temperature Ta (°C)

PC – Ta

Collector-emitter voltage VCE (V)

Safe Operating Area

0

Common emitter

VCE = −2 V

25

−55

Tc = 100°C

−2.0

−0.4

−0.8

−1.2

−1.6

−2.0

−0.5

−1.0

−1.5

12

0

(1) Tc = Ta infinite heat sink

(2) Ceramic substrate

50 × 50 × 0.8 mm

(3) No heat sink

25

50

75

100

125

150

175

2

4

6

8

10

(1)

(2)

(3)

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated linearly

with increase in temperature.

−0.01

−0.5

−5

IC max (continuous)

IC max (pulsed)*

VCEO max

1 ms*

10 ms*

100 ms*

DC operation

thermal limited

S/B limited

−30

−100

−5

−10

−1

−3

−0.03

−0.05

−0.1

−0.3

−0.5

−1

−3

−50

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