Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Toshiba Semiconductor |
2SK184-GRTPE4
|
295Kb / 4P |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
2SK210-Y
|
329Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Unisonic Technologies |
K1875
|
85Kb / 3P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
|
K1875
|
83Kb / 3P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
|
K4059
|
145Kb / 3P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
|
K4059
|
136Kb / 3P |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
|
Toshiba Semiconductor |
HN1K04FU
|
124Kb / 5P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
SSM3K17FU
|
234Kb / 5P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
SSM6N04FU
|
175Kb / 5P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TK8A60DA
|
266Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|