KSB564A datasheet(1/1 Pages) WINNERJOIN

No. de pieza	KSB564A

Descripción Electrónicos	TRANSISTOR (PNP)

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WEJ

ELECTRONIC

CO.,LTD

KSB564A TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

0.8

W (Tamb=25

℃)

Collector current

ICM:

-1

A

Collector-base voltage

V(BR)CBO:

-30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100µA, IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10 mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

µA

DC current gain

hFE

VCE=-1V, IC= -0.1A

70

400

Collector-emitter saturation voltage

VCEsat

IC= -1A, IB= -0.1A

-0.5

V

Base-emitter saturation voltage

VBEsat

IC= -1A, IB= -0.1A

-1.2

V

Transition frequency

f T

VCE=-6V, IC= -10mA

80

MHz

Output capacitance

Cob

VCE=-6V, IE=0, f=1 MHz

25

pF

CLASSIFICATION OF hFE

Rank

O

Y

G

Range

70-140

120-240

200-400

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

KSB564A

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E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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KSB564A Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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