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TC58NYG0S3EBAI4 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TC58NYG0S3EBAI4 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 65 page TC58NYG0S3EBAI4 2011-03-01C 3 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 2.5 V VIN Input Voltage −0.6 to 2.5 V VI/O Input /Output Voltage −0.6 to V CC + 0.3 ( ≤ 2.5 V) V PD Power Dissipation 0.3 W TSOLDER Soldering Temperature (10 s) 260 °C TSTG Storage Temperature −55 to 125 °C TOPR Operating Temperature -40 to 85 °C CAPACITANCE *(Ta = 25°C, f = 1 MHz) SYMB0L PARAMETER CONDITION MIN MAX UNIT CIN Input VIN = 0 V ⎯ 10 pF COUT Output VOUT = 0 V ⎯ 10 pF * This parameter is periodically sampled and is not tested for every device. I/O Control circuit Status register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control circuit HV generator Logic control BY / RY VCC I/O1 VSS I/O8 CE CLE ALE WE RE BY / RY to WP Address register |
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