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2SC3303 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC3303 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC3303 2010-02-05 4 Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Pulse width tw (s) rth – tw Collector-emitter voltage VCE (V) Safe Operating Area 0.1 0.003 Common emitter IC/IB = 20 25 100 Tc = −55°C 30 0.01 0.1 1 3 10 0.3 0.5 1 5 10 3 0.03 0.3 0 0 Common emitter VCE = 1 V 5 4 3 2 1 0.4 0.8 1.2 1.0 1.4 0.6 25 −55 Tc = 100°C 0.2 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.1 0.001 100 0.01 0.1 1 10 100 1000 10 1 (1) (2) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.3 20 IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* DC operation Tc = 25°C 30 100 3 10 1 1 0.03 0.05 0.1 0.3 0.5 5 3 10 100 μs* 10 μs* |
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