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2SC3303 Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza 2SC3303
Descripción Electrónicos  High Current Switching Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3303 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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2SC3303
2010-02-05
4
Collector current IC (A)
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Pulse width tw (s)
rth – tw
Collector-emitter voltage VCE (V)
Safe Operating Area
0.1
0.003
Common emitter
IC/IB = 20
25
100
Tc = −55°C
30
0.01
0.1
1
3
10
0.3
0.5
1
5
10
3
0.03
0.3
0
0
Common emitter
VCE = 1 V
5
4
3
2
1
0.4
0.8
1.2
1.0
1.4
0.6
25 −55
Tc = 100°C
0.2
Curves should be applied in thermal limited area. (single
nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
0.1
0.001
100
0.01
0.1
1
10
100
1000
10
1
(1)
(2)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.3
20
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
DC operation
Tc = 25°C
30
100
3
10
1
1
0.03
0.05
0.1
0.3
0.5
5
3
10
100 μs*
10 μs*


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