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2SC3303 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3303 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC3303 2010-02-05 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current Pulse ICP 8 A Base current IB 1 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 20 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
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