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74LVC2G00GT-G Datasheet(PDF) 5 Page - NXP Semiconductors

No. de Pieza. 74LVC2G00GT-G
Descripción  Dual 2-input NAND gate
Descarga  20 Pages
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Fabricante  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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74LVC2G00GT-G Datasheet(HTML) 5 Page - NXP Semiconductors

 
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74LVC2G00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 8 April 2013
5 of 20
NXP Semiconductors
74LVC2G00
Dual 2-input NAND gate
9.
Recommended operating conditions
10. Static characteristics
Table 6.
Operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
Active mode
0
VCC
V
Power-down mode
0
5.5
V
Tamb
ambient temperature
40
+125
C
t/V
input transition rise and fall rate
VCC =1.65V to2.7V
-
20
ns/V
VCC = 2.7 V to 5.5 V
-
10
ns/V
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 40 C to +85 C[1]
VIH
HIGH-level input voltage
VCC = 1.65 V to 1.95 V
0.65
 V
CC
--
V
VCC = 2.3 V to 2.7 V
1.7
-
-
V
VCC = 2.7 V to 3.6 V
2.0
-
-
V
VCC = 4.5 V to 5.5 V
0.7
 V
CC
--
V
VIL
LOW-level input voltage
VCC = 1.65 V to 1.95 V
-
-
0.35
 V
CC
V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 2.7 V to 3.6 V
-
-
0.8
V
VCC = 4.5 V to 5.5 V
-
-
0.3
 V
CC
V
VOH
HIGH-level output voltage VI =VIH or VIL
IO = 100 A; VCC = 1.65 V to 5.5 V
VCC  0.1
-
-
V
IO = 4 mA; VCC =1.65 V
1.2
1.53
-
V
IO = 8 mA; VCC = 2.3 V
1.9
2.13
-
V
IO = 12 mA; VCC = 2.7 V
2.2
2.50
-
V
IO = 24 mA; VCC = 3.0 V
2.3
2.60
-
V
IO = 32 mA; VCC = 4.5 V
3.8
4.10
-
V
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 100 A; VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
0.08
0.45
V
IO = 8 mA; VCC = 2.3 V
-
0.14
0.3
V
IO = 12 mA; VCC = 2.7 V
-
0.19
0.4
V
IO = 24 mA; VCC = 3.0 V
-
0.37
0.55
V
IO = 32 mA; VCC = 4.5 V
-
0.43
0.55
V
II
input leakage current
VI = 5.5 V or GND; VCC =0 V to 5.5 V
-
0.1
5
A
IOFF
power-off leakage current VI or VO = 5.5 V; VCC = 0 V
-
0.1
10
A


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