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BC847BS Datasheet(PDF) 6 Page - NXP Semiconductors |
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BC847BS Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BC847BS_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 18 February 2009 6 of 12 NXP Semiconductors BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor VCE =5V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 4. Per transistor: DC current gain as a function of collector current; typical values Fig 5. Per transistor: Collector current as a function of collector-emitter voltage; typical values VCE =5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C Fig 6. Per transistor: Base-emitter voltage as a function of collector current; typical values Fig 7. Per transistor: Base-emitter saturation voltage as a function of collector current; typical values mgt727 10−1 110 102 103 IC (mA) 0 600 500 400 300 200 100 hFE (1) (2) (3) VCE (V) 05 4 23 1 006aab422 0.10 0.05 0.15 0.20 IC (A) 0 IB (mA) = 4.0 0.8 0.4 3.6 3.2 1.6 2.4 2.8 2.0 1.2 0 1200 1000 800 600 400 200 mgt728 10−2 10−1 110 102 103 IC (mA) VBE (mV) (1) (2) (3) 006aab423 0.6 0.8 0.4 1.0 1.2 VBEsat (V) 0.2 IC (mA) 10−1 103 102 110 (1) (2) (3) |
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