10k

100k

1M

10M

100M 500M

-3

-2

-1

0

+1

+2

+3

FREQUENCY (Hz)

100k

1M

10M

200M

FREQUENCY (Hz)

4.0

2.0

±5V

±2.5V

6.0

8.0

0.0

LMH6642, LMH6643, LMH6644

SNOS966P – MAY 2001 – REVISED MARCH 2013

www.ti.com

Closed Loop Gain vs. Frequency for Various Gain

Large Signal Frequency Response

Figure 1.

Figure 2.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

ESD Tolerance

±2.5V

Output Short Circuit Duration

13.5V

Voltage at Input/Output pins

−0.8V

Input Current

±10mA

Storage Temperature Range

−65°C to +150°C

+150°C

Soldering Information

Infrared or Convection Reflow (20 sec)

235°C

Wave Soldering Lead Temp.(10 sec)

260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test

conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3)

Human body model, 1.5k

Ω in series with 100pF.

(4)

Machine Model, 0

Ω in series with 200pF.

(5)

CDM: Charge Device Model

(6)

Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in

exceeding the maximum allowed junction temperature of 150°C.

(7)

(8)

2

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