Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SMMBF4391LT1G Datasheet(PDF) 5 Page - ON Semiconductor |
|
SMMBF4391LT1G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 6 page MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G http://onsemi.com 5 Figure 10. Effect of IDSS on Drain−Source Resistance and Gate−Source Voltage IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) 20 10 30 40 50 30 40 50 60 70 20 0 10 0 1.0 2.0 3.0 4.0 5.0 Tchannel = 25°C VGS(off) rDS(on) @ VGS = 0 6.0 7.0 8.0 9.0 10 70 60 80 90 100 80 90 100 110 120 130 140 150 NOTE 2 The Zero−Gate−Voltage Drain Current (IDSS) is the principle determinant of other J−FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (VGS(off)) and Drain−Source On Resistance (rDS(on)) to IDSS. Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rDS(on) and VGS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for IDSS = 75 mA. The corresponding VGS values are 2.2 V and 4.8 V. |
Número de pieza similar - SMMBF4391LT1G |
|
Descripción similar - SMMBF4391LT1G |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |