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SMMBF4391LT1G Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza SMMBF4391LT1G
Descripción Electrónicos  JFET Switching Transistors
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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SMMBF4391LT1G Datasheet(HTML) 5 Page - ON Semiconductor

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MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
http://onsemi.com
5
Figure 10. Effect of IDSS on Drain−Source
Resistance and Gate−Source Voltage
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
20
10
30
40
50
30 40 50 60 70
20
0
10
0
1.0
2.0
3.0
4.0
5.0
Tchannel = 25°C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.


Número de pieza similar - SMMBF4391LT1G

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Descripción similar - SMMBF4391LT1G

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