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AT29BV040A Datasheet(PDF) 1 Page - ATMEL Corporation

No. de Pieza. AT29BV040A
Descripción  4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
Descarga  14 Pages
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Fabricante  ATMEL [ATMEL Corporation]
Página de inicio  http://www.atmel.com
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AT29BV040A Datasheet(HTML) 1 Page - ATMEL Corporation

 
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Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time – 200 ns
Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
Two 16K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time – 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Minimum Endurance 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 200 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 µA. The device
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT29BV040A
Rev. 0383G–FLASH–5/03
TSOP Top View
Type 1
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3


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