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TSF20U60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSF20U60C
Descripción Electrónicos  Trench MOS Barrier Schottky Rectifier
Download  3 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSF20U60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
SYMBOL
UNIT
VRRM
V
IRRM
A
dV/dt
V/μs
VBR
V
IF = 10A
IF = 20A
IF = 10A
IF = 20A
TJ = 25°C
μA
TJ = 125°C
mA
RθjC
OC/W
TJ
OC
TSTG
OC
Note 1: 2.0 μs Pulse Width, f=1.0 kHz
Document Number: DS_D1401024
Version: C14
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
TSF20U45C thru TSF20U60C
34
0.5
100
60
45
TSF20U45C
TSF20U60C
45
60
180
0.60
0.47
Weight:
1.7g (approximately)
- Halogen-free according to IEC 61249-2-21 definition
FEATURES
V
A
Polarity:
As marked
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
Peak repetitive reverse surge current (Note 1)
200
IF(AV)
Voltage rate of change (Rated VR)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
10000
20
IFSM
3
Isolation voltage from terminal to heatsink
t = 1 min
VAC
- 55 to +150
Typical thermal resistance per diode
-
IR
VF
1500
2000
500
Taiwan Semiconductor
A
Maximum instantaneous reverse current per diode at
rated reverse voltage
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
per device
Case:
ITO-220AB
per diode
MECHANICAL DATA
Mounting torque:
5 in-lbs. max.
Maximum repetitive peak reverse voltage
10
Trench MOS Barrier Schottky Rectifier
Maximum average forward rectified
current
VF
0.65
0.47
PARAMETER
TJ = 25°C
V
0.60
TJ = 125°C
Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle
Operating junction temperature range
Storage temperature range
Maximum instantaneous forward voltage
per diode ( Note2 )
0.50
0.51
Breakdown voltage ( IR =1.0mA, Ta =25°C )
- 55 to +150


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