REV. C

AD9631/AD9632

–3–

ABSOLUTE MAXIMUM RATINGS

1

Voltage Swing

¥ Bandwidth Product . . . . . . . . . . . 550 V-MHz

Internal Power Dissipation

2

Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .

±1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . . –65 C to +125 C

Operating Temperature Range (A Grade) . . . . –40 C to +85 C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300 C

NOTES

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

8-Lead PDIP Package:

8-Lead SOIC Package:

METALLIZATION PHOTO

Dimensions shown in inches and (millimeters)

AD9631

AD9632

–IN

2

7

6

OUT

–IN

2

7

6

OUT

3

+IN

4

3

+IN

4

0.046

(1.17)

0.046

(1.17)

0.050 (1.27)

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by these

devices is limited by the associated rise in junction temperature.

The maximum safe junction temperature for plastic encapsulated

devices is determined by the glass transition temperature of the

plastic, approximately 150 C. Exceeding this limit temporarily

may cause a shift in parametric performance due to a change in

the stresses exerted on the die by the package. Exceeding a junc-

tion temperature of 175 C for an extended period can result in

device failure.

While the AD9631 and AD9632 are internally short circuit

protected, this may not be sufficient to guarantee that the maxi-

mum junction temperature (150 C) is not exceeded under all

conditions. To ensure proper operation, it is necessary to observe

the maximum power derating curves.

AMBIENT TEMPERATURE – C

2.0

1.5

0

–50

1.0

0.5

–40 –30 –20 –10

0

10

20

30

40 50

60 70

80 90

8-LEAD PDIP PACKAGE

8-LEAD SOIC PACKAGE

Figure 2. Maximum Power Dissipation

vs. Temperature

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description Option

AD9631AN

–40

∞C to +85∞C PDIP

N-8

AD9631AR

–40

∞C to +85∞C SOIC

R-8

AD9631AR-REEL

–40

∞C to +85∞C SOIC

R-8

AD9631AR-REEL7 –40

∞C to +85∞C SOIC

R-8

AD9631CHIPS

Die

AD9632AN

–40

∞C to +85∞C PDIP

N-8

AD9632AR

–40

∞C to +85∞C SOIC

R-8

AD9632AR-REEL

–40

∞C to +85∞C SOIC

R-8

AD9632AR-REEL7 –40

∞C to +85∞C SOIC

R-8

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although the

AD9631/AD9632 features proprietary ESD protection circuitry, permanent damage may occur on

devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are

recommended to avoid performance degradation or loss of functionality.