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2N6124 Datasheet(PDF) 2 Page - Boca Semiconductor Corporation |
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2N6124 Datasheet(HTML) 2 Page - Boca Semiconductor Corporation |
2 / 2 page Continental Device India Limited Data Sheet Page 2 of 3 Collector current IC max. 4.0 A Collector current (Peak) ICM max. 7.0 A Base current IB max. 1.0 A Total power dissipation up to TC = 25°C Ptot max. 40 W Derate above 25°C max. 320 mW/°C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 ºC THERMAL RESISTANCE From junction to case Rth j–c 3.12 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 6121 6122 6123 6124 6125 6126 Collector cutoff current IB = 0; VCE = 45 V ICEO max. 1.0 – – mA IB = 0; VCE = 60 V ICEO max. – 1.0 – mA IB = 0; VCE = 80 V ICEO max. – – 1.0 mA VEB(off) = 1.5 V; VCE = 45 V ICEX max. 0.1 – – mA VEB(off) = 1.5 V; VCE = 60 V ICEX max. – 0.1 – mA VEB(off) = 1.5 V; VCE = 85 V ICEX max. – – 0.1 mA VEB(off) = 1.5 V; VCE = 45 V; TC = 125°C ICEXmax. 2.0 – – mA VEB(off) = 1.5 V; VCE = 60 V; TC = 125°C ICEXmax. – 2.0 – mA VEB(off) = 1.5 V; VCE = 80 V; TC = 125°C ICEXmax. – – 2.0 mA IE = 0; VCB = 45 V ICBO max. 0.1 – – mA IE = 0; VCB = 60 V ICBO max. – 0.1 – mA IE = 0; VCB = 80 V ICBO max. – – 0.1 mA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 1.0 mA Breakdown voltages IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 V IC = 1 mA; IE = 0 VCBO min. 45 60 80 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 1.5 A; IB = 0.15 A VCEsat* max. 0.6 V IC = 4 A; IB = 1.0 A VCEsat* max. 1.4 V Base-emitter on voltage IC = 1.5 A; VCE = 2 V VBE(on)* max. 1.2 V D.C. current gain IC = 1.5 A; VCE = 2 V hFE* min. 25 25 20 max.100 100 80 IC = 4 A; VCE = 2 V hFE* min. 10 10 7.0 Small signal current IC = 0.1 A; VCE = 2 V; f = 1.0 KHz hfe min. 25 Transition frequency at f = 1 MHz IC = 1 A; VCE = 4 V fT min. 2.5 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 http://www.bocasemi.com page: 2 |
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