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KSD-D0O042-001 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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KSD-D0O042-001 Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 5 page KSD-D0O042-001 2 Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 300 V Maximum average forward rectified current per diode IF(AV) 10 A total device 20 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per 1 chip IFSM 120 A Storage temperature range Tstg -45 to +150 ℃ Maximum operating junction temperature Tj 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 4.0 ℃ /W total device 3.6 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM (1) IFM = 10A Tj=25℃ - - 1.30 V Tj=125℃ - - 0.95 Reverse leakage current IRM (1) VR = VRRM Tj=25℃ - - 20 uA Tj=125℃ - - 500 Reverse recovery time trr IF = 1A, di/dt =-100 A/us - - 30 ns Junction capacitance Cj VR = 10VDC, f=1MHz - 65 - pF Note : (1) Pulse test : tP≤380us, Duty cycle≤2% SF20A300HZ2 |
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