Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
CSD17483F4 Datasheet(PDF) 1 Page - Texas Instruments |
|
|
CSD17483F4 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 12 page D G S 0.35 mm CSD17483F4 SLPS447B – JULY 2013 – REVISED FEBRUARY 2014 CSD17483F4, 30 V N-Channel FemtoFET™ MOSFET Product Summary 1 Features VDS Drain-to-Source Voltage 30 V 1 • Low On Resistance Qg Gate Charge Total (4.5 V) 1010 pC • Low Qg and Qgd Qgd Gate Charge Gate to Drain 130 pC • Low Threshold Voltage VGS = 1.8 V 370 • Ultra-Small Footprint (0402 Case Size) RDS(on) Drain-to-Source On Resistance VGS = 2.5 V 240 m Ω VGS = 4.5 V 200 – 1.0 mm x 0.6 mm VGS(th) Threshold Voltage 0.85 V • Ultra-Low Profile – 0.35 mm Height Ordering Information • Integrated ESD Protection Diode Device Qty Media Package Ship – Rated > 4 kV HBM 7-Inch CSD17483F4 3000 Reel Femto(0402) 1.0 mm x Tape and – Rated > 2 kV CDM 0.6 mm SMD Lead Less Reel 7-Inch CSD17483F4T 250 • Lead and Halogen Free Reel • RoHS Compliant Absolute Maximum Ratings 2 Applications TA = 25°C unless otherwise stated VALUE UNIT VDS Drain-to-Source Voltage 30 V • Optimized for Load Switch Applications VGS Gate-to-Source Voltage 12 V • Optimized for General Purpose Switching ID Continuous Drain Current, TA = 25°C (1) 1.5 A Applications IDM Pulsed Drain Current, TA = 25°C (2) 5 A • Single-Cell Battery Applications Continuous Gate Clamp Current 35 IG mA • Handheld and Mobile Applications Pulsed Gate Clamp Current(2) 350 PD Power Dissipation(1) 500 mW 3 Description Human Body Model (HBM) 4 kV ESD The FemtoFET™ MOSFET technology has been Rating Charged Device Model (CDM) 2 kV designed and optimized to minimize the footprint in TJ, Operating Junction and –55 to 150 °C many handheld and mobile applications. This TSTG Storage Temperature Range technology is capable of replacing standard small Avalanche Energy, single pulse ID = 7.4 A, EAS 2.7 mJ signal MOSFETs while providing at least a 60% L = 0.1 mH, RG = 25 Ω reduction in footprint size. (1) Typical RθJA = 90°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071- mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. . (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% Typical Part Dimensions Top View . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Número de pieza similar - CSD17483F4 |
|
Descripción similar - CSD17483F4 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |