2N5606 datasheet(1/3 Pages) SAVANTIC

No. de pieza	2N5606

Descripción Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrónico	SAVANTIC [Savantic, Inc.]

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5606 2N5608 2N5610 2N5612

DESCRIPTION

·With TO-66 package

·Excellent safe operating area

·Low collector saturation voltage

APPLICATIONS

·For general-purpose amplifier ;

and switching applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta= )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5606

80

2N5608/5610

100

VCBO

Collector-base voltage

2N5612

Open emitter

120

V

2N5606

60

2N5608/5610

80

VCEO

Collector-emitter voltage

2N5612

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

5

A

PD

Total power dissipation

TC=25

25

W

Tj

Junction temperature

150

Tstg

Storage temperature

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

4.37

/W

Fig.1 simplified outline (TO-66) and symbol

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2N5606 Datasheet(PDF) 1 Page - Savantic, Inc.

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