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2N5616 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5616 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5614 60 2N5616/5618 80 VCEO(SUS) Collector-emitter sustaining voltage 2N5620 IC=50mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA 2N5614/5618 70 200 hFE DC current gain 2N5616/5620 IC=2.5A ; VCE=5V 30 90 2N5614/5618 70 fT Transition frequency 2N5616/5620 IC=0.5A ; VCE=10V 60 MHz |
Número de pieza similar - 2N5616 |
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