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2N6569 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N6569 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6569 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 40 V VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=2.4A 4.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 2.0 V ICEO Collector cut-off current VCE=40V; IB=0 1.0 mA ICBO Collector cut-off current VCB=45V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=3V 15 200 hFE-2 DC current gain IC=12A ; VCE=4V 5 100 fT Transition frequency IC=1.0A ; VCE=4V;f=0.5MHz 1.5 20 MHz Switching times td Delay time 0.4 µs tr Rise time 1.5 µs tstg Storage time 5.0 µs tf Fall time IC=2A; IB1=-IB2=0.2A VCC=30V; tp=25µs; Duty CycleA2.0% 1.5 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.75 /W |
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